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2301H
Part number：
2301H
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
Goford Semiconductor
describe：
P30V,RD(MAX)<130M@-4.5V,RD(MAX)<
sales volume：
0
package：
Cut Tape (CT)
ROHS status：
Yes
currency：
USD
PDF:
BUY NOW add to cart
inventory 4751
minimum : 1
quantity
unit price
price
1
0.26
0.26
10
0.158
1.58
100
0.0982
9.82
500
0.07212
36.06
1000
0.06366
63.66
specifications
  • Part Status
    Active
  • Grade
    -
  • Qualification
    -
  • Mounting Type
    Surface Mount
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package
    SOT-23-3
  • FET Type
    P-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    30 V
  • Current - Continuous Drain (Id) @ 25°C
    2.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    4.5V, 10V
  • Rds On (Max) @ Id, Vgs
    75mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id
    2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs
    4.5 nC @ 2.5 V
  • Vgs (Max)
    ±20V
  • Input Capacitance (Ciss) (Max) @ Vds
    366 pF @ 15 V
  • Power Dissipation (Max)
    890mW (Tc)
  • FET Feature
    -
  • 2853923259
  • 互联网请联系:
    +86 13510600013
    芯片请联系:
    +86 15521078889
  • 86 13510600013

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