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AC3M0280090D
Part number：
AC3M0280090D
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
APSEMI
describe：
SIC MOSFET N-CH 900V 11A TO247-3
sales volume：
0
package：
Tube
ROHS status：
Yes
currency：
USD
PDF:
BUY NOW add to cart
inventory 2300
minimum : 1
quantity
unit price
price
1
3.23
3.23
11
3.01636
33.17996
51
2.69333
137.35983
101
1.93921
195.86021
501
1.61603
809.63103
specifications
  • Part Status
    Active
  • Grade
    -
  • Qualification
    -
  • Mounting Type
    Through Hole
  • Operating Temperature
    -55°C ~ 150°C
  • Package / Case
    TO-247-3
  • Supplier Device Package
    TO-247-3
  • FET Type
    N-Channel
  • Technology
    SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss)
    900 V
  • Current - Continuous Drain (Id) @ 25°C
    11A
  • Drive Voltage (Max Rds On, Min Rds On)
    15V
  • Rds On (Max) @ Id, Vgs
    360mOhm @ 7.5A, 15V
  • Vgs(th) (Max) @ Id
    3.7V @ 1.2mA
  • Vgs (Max)
    +19V, -8V
  • Power Dissipation (Max)
    47W
  • 2853923259
  • 互联网请联系:
    +86 13510600013
    芯片请联系:
    +86 15521078889
  • 86 13510600013

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