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AS1M025120T
Part number：
AS1M025120T
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
ANBON SEMICONDUCTOR (INT'L) LIMITED
describe：
N-CHANNEL SILICON CARBIDE POWER
sales volume：
0
package：
Tube
ROHS status：
Yes
currency：
USD
BUY NOW add to cart
inventory 2013
minimum : 1
quantity
unit price
price
1
36.81
36.81
30
24.404
732.12
120
24.40117
2928.1404
specifications
  • Part Status
    Active
  • Grade
    -
  • Qualification
    -
  • Mounting Type
    Through Hole
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Package / Case
    TO-247-4
  • Supplier Device Package
    TO-247-4
  • FET Type
    N-Channel
  • Technology
    SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss)
    1200 V
  • Current - Continuous Drain (Id) @ 25°C
    65A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    20V
  • Rds On (Max) @ Id, Vgs
    34mOhm @ 50A, 20V
  • Vgs(th) (Max) @ Id
    4V @ 15mA
  • Gate Charge (Qg) (Max) @ Vgs
    195 nC @ 20 V
  • Vgs (Max)
    +25V, -10V
  • Input Capacitance (Ciss) (Max) @ Vds
    4200 pF @ 1000 V
  • Power Dissipation (Max)
    370W (Tc)
  • FET Feature
    -
  • 2853923259
  • 互联网请联系:
    +86 13510600013
    芯片请联系:
    +86 15521078889
  • 86 13510600013

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