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CBR10P65HL
Part number:
CBR10P65HL
manufacturer:
describe:
DIODE SIL CARBIDE 650V 30A 4DFN
sales volume:
0
package:
Cut Tape (CT)
ROHS status:
Yes
currency:
USD
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inventory 2012
minimum : 1
quantity
unit price
price
1
3.49
3.49
specifications
  • Part Status
    Active
  • Mounting Type
    Surface Mount
  • Package / Case
    4-PowerTSFN
  • Supplier Device Package
    4-DFN (8x8)
  • Speed
    No Recovery Time > 500mA (Io)
  • Technology
    SiC (Silicon Carbide) Schottky
  • Current - Reverse Leakage @ Vr
    25 µA @ 650 V
  • Voltage - DC Reverse (Vr) (Max)
    650 V
  • Current - Average Rectified (Io)
    30A
  • Voltage - Forward (Vf) (Max) @ If
    1.7 V @ 10 A
  • Capacitance @ Vr, F
    -
  • Operating Temperature - Junction
    -55°C ~ 150°C
  • Reverse Recovery Time (trr)
    0 ns