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CC-C2-B15-0322
Part number：
CC-C2-B15-0322
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
CoolCAD
describe：
SiC Power MOSFET 1200V 12A
sales volume：
0
package：
Bulk
ROHS status：
Yes
currency：
USD
PDF:
BUY NOW add to cart
inventory 2005
minimum : 5
quantity
unit price
price
5
7
35
10
6
60
100
5.5
550
specifications
  • Part Status
    Active
  • Mounting Type
    Through Hole
  • Operating Temperature
    -40°C ~ 175°C (TJ)
  • Package / Case
    TO-247-4
  • Supplier Device Package
    TO-247
  • FET Type
    N-Channel
  • Technology
    SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss)
    1200 V
  • Current - Continuous Drain (Id) @ 25°C
    12A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On)
    15V
  • Rds On (Max) @ Id, Vgs
    135mOhm @ 10A, 15V
  • Vgs(th) (Max) @ Id
    3.2V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs
    40 nC @ 15 V
  • Vgs (Max)
    +15V, -5V
  • Input Capacitance (Ciss) (Max) @ Vds
    1810 pF @ 200 V
  • Power Dissipation (Max)
    100W (Tc)
  • FET Feature
    -
  • 2853923259
  • 互联网请联系:
    +86 13510600013
    芯片请联系:
    +86 15521078889
  • 86 13510600013

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