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EPC2016C
Part number：
EPC2016C
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
EPC
describe：
GANFET N-CH 100V 18A DIE
sales volume：
0
package：
Cut Tape (CT)
ROHS status：
Yes
currency：
USD
PDF:
BUY NOW add to cart
inventory 46650
minimum : 1
quantity
unit price
price
1
3.4
3.4
10
2.219
22.19
100
1.5445
154.45
500
1.3311
665.55
specifications
  • Part Status
    Not For New Designs
  • Grade
    -
  • Qualification
    -
  • Mounting Type
    Surface Mount
  • Operating Temperature
    -40°C ~ 150°C (TJ)
  • Package / Case
    Die
  • Supplier Device Package
    Die
  • FET Type
    N-Channel
  • Technology
    GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss)
    100 V
  • Current - Continuous Drain (Id) @ 25°C
    18A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On)
    5V
  • Rds On (Max) @ Id, Vgs
    16mOhm @ 11A, 5V
  • Vgs(th) (Max) @ Id
    2.5V @ 3mA
  • Gate Charge (Qg) (Max) @ Vgs
    4.5 nC @ 5 V
  • Vgs (Max)
    +6V, -4V
  • Input Capacitance (Ciss) (Max) @ Vds
    420 pF @ 50 V
  • Power Dissipation (Max)
    -
  • FET Feature
    -
  • 2853923259
  • 互联网请联系:
    +86 13510600013
    芯片请联系:
    +86 15521078889
  • 86 13510600013

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