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specifications
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Part Status
Obsolete
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Grade
-
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Qualification
-
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Mounting Type
Through Hole
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Operating Temperature
-55°C ~ 150°C (TJ)
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Package / Case
TO-3P-3, SC-65-3
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Supplier Device Package
TO-3PN
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FET Type
N-Channel
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Technology
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss)
200 V
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Current - Continuous Drain (Id) @ 25°C
65A (Tc)
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Drive Voltage (Max Rds On, Min Rds On)
10V
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Rds On (Max) @ Id, Vgs
32mOhm @ 32.5A, 10V
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Vgs(th) (Max) @ Id
5V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs
200 nC @ 10 V
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Vgs (Max)
±30V
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Input Capacitance (Ciss) (Max) @ Vds
7900 pF @ 25 V
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Power Dissipation (Max)
310W (Tc)
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FET Feature
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