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GE12050EEA3
Part number：
GE12050EEA3
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
GE Aerospace
describe：
MOSFET 6N-CH 1200V 475A MODULE
sales volume：
0
package：
Bulk
ROHS status：
Yes
currency：
USD
PDF:
BUY NOW add to cart
inventory 2005
minimum : 1
quantity
unit price
price
1
8799
8799
specifications
  • Part Status
    Active
  • Qualification
    AEC-Q101
  • Mounting Type
    Chassis Mount
  • Power - Max
    1250W
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Package / Case
    Module
  • Supplier Device Package
    Module
  • Technology
    Silicon Carbide (SiC)
  • Drain to Source Voltage (Vdss)
    1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C
    475A
  • Rds On (Max) @ Id, Vgs
    4.4mOhm @ 475A, 20V
  • Vgs(th) (Max) @ Id
    4.5V @ 160mA
  • Gate Charge (Qg) (Max) @ Vgs
    1248nC @ 18V
  • Input Capacitance (Ciss) (Max) @ Vds
    29300pF @ 600V
  • Configuration
    6 N-Channel (3-Phase Bridge)
  • FET Feature
    -
  • 2853923259
  • 互联网请联系:
    +86 13510600013
    芯片请联系:
    +86 15521078889
  • 86 13510600013

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