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GT110N06S
Part number：
GT110N06S
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
Goford Semiconductor
describe：
N60V,RD(MAX)<15M@-4.5V,RD(MAX)<1
sales volume：
0
package：
Cut Tape (CT)
ROHS status：
Yes
currency：
USD
PDF:
BUY NOW add to cart
inventory 5533
minimum : 1
quantity
unit price
price
1
1.14
1.14
10
0.712
7.12
100
0.4675
46.75
500
0.36228
181.14
1000
0.32836
328.36
2000
0.29983
599.66
specifications
  • Part Status
    Active
  • Grade
    -
  • Qualification
    -
  • Mounting Type
    Surface Mount
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Package / Case
    8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package
    8-SOP
  • FET Type
    N-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    60 V
  • Current - Continuous Drain (Id) @ 25°C
    14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    4.5V, 10V
  • Rds On (Max) @ Id, Vgs
    11mOhm @ 14A, 10V
  • Vgs(th) (Max) @ Id
    2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs
    24 nC @ 10 V
  • Vgs (Max)
    ±20V
  • Input Capacitance (Ciss) (Max) @ Vds
    1300 pF @ 25 V
  • Power Dissipation (Max)
    3W (Tc)
  • FET Feature
    -
  • 2853923259
  • 互联网请联系:
    +86 13510600013
    芯片请联系:
    +86 15521078889
  • 86 13510600013

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