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IV1D12010O2
Part number：
IV1D12010O2
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
Inventchip
describe：
DIODE SIL CARB 1200V 28A TO220
sales volume：
0
package：
Tube
ROHS status：
Yes
currency：
USD
BUY NOW add to cart
inventory 2190
minimum : 1
quantity
unit price
price
1
3.17
3.17
50
1.5826
79.13
100
1.4285
142.85
500
1.15838
579.19
1000
1.0716
1071.6
2000
0.99865
1997.3
5000
0.9875
4937.5
specifications
  • Part Status
    Active
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-2
  • Supplier Device Package
    TO-220-2
  • Speed
    No Recovery Time > 500mA (Io)
  • Technology
    SiC (Silicon Carbide) Schottky
  • Current - Reverse Leakage @ Vr
    50 µA @ 1200 V
  • Voltage - DC Reverse (Vr) (Max)
    1200 V
  • Current - Average Rectified (Io)
    28A
  • Voltage - Forward (Vf) (Max) @ If
    1.8 V @ 10 A
  • Capacitance @ Vr, F
    575pF @ 1V, 1MHz
  • Operating Temperature - Junction
    -55°C ~ 175°C
  • Reverse Recovery Time (trr)
    0 ns
  • 2853923259
  • 互联网请联系:
    +86 13510600013
    芯片请联系:
    +86 15521078889
  • 86 13510600013

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