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IV1D12010T2
Part number：
IV1D12010T2
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
Inventchip
describe：
DIODE SIL CARB 1200V 30A TO2472
sales volume：
0
package：
Tube
ROHS status：
Yes
currency：
USD
BUY NOW add to cart
inventory 2095
minimum : 1
quantity
unit price
price
1
3.52
3.52
30
1.916
57.48
120
1.56192
187.4304
510
1.30218
664.1118
1020
1.20734
1231.4868
2010
1.1375
2286.375
specifications
  • Part Status
    Active
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-2
  • Supplier Device Package
    TO-247-2
  • Speed
    No Recovery Time > 500mA (Io)
  • Technology
    SiC (Silicon Carbide) Schottky
  • Current - Reverse Leakage @ Vr
    50 µA @ 1200 V
  • Voltage - DC Reverse (Vr) (Max)
    1200 V
  • Current - Average Rectified (Io)
    30A
  • Voltage - Forward (Vf) (Max) @ If
    1.8 V @ 10 A
  • Capacitance @ Vr, F
    575pF @ 1V, 1MHz
  • Operating Temperature - Junction
    -55°C ~ 175°C
  • Reverse Recovery Time (trr)
    0 ns
  • 2853923259
  • 互联网请联系:
    +86 13510600013
    芯片请联系:
    +86 15521078889
  • 86 13510600013

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