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IV1Q12050T4
Part number:
IV1Q12050T4
manufacturer:
describe:
SIC MOSFET, 1200V 50MOHM, TO-247
sales volume:
0
package:
Tube
ROHS status:
Yes
currency:
USD
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inventory 2000
minimum : 120
quantity
unit price
price
120
7.53683
904.4196
specifications
  • Part Status
    Active
  • Grade
    -
  • Qualification
    -
  • Mounting Type
    Through Hole
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Package / Case
    TO-247-4
  • Supplier Device Package
    TO-247-4
  • FET Type
    N-Channel
  • Technology
    SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss)
    1200 V
  • Current - Continuous Drain (Id) @ 25°C
    58A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    20V
  • Rds On (Max) @ Id, Vgs
    65mOhm @ 20A, 20V
  • Vgs(th) (Max) @ Id
    3.2V @ 6mA
  • Gate Charge (Qg) (Max) @ Vgs
    120 nC @ 20 V
  • Vgs (Max)
    +20V, -5V
  • Input Capacitance (Ciss) (Max) @ Vds
    2750 pF @ 800 V
  • Power Dissipation (Max)
    344W (Tc)
  • FET Feature
    -