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N3T035MP120D
Part number：
N3T035MP120D
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
NoMIS Power
describe：
1200 V, 35 m SiC MOSFET, TO-247-
sales volume：
0
package：
Tube
ROHS status：
Yes
currency：
USD
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inventory 2652
minimum : 1
quantity
unit price
price
1
16.95
16.95
25
14.95
373.75
100
13.95
1395
500
12.95
6475
specifications
  • Part Status
    Active
  • Grade
    -
  • Qualification
    -
  • Mounting Type
    Through Hole
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Package / Case
    TO-247-3
  • Supplier Device Package
    TO-247-3L
  • FET Type
    N-Channel
  • Technology
    SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss)
    1200 V
  • Current - Continuous Drain (Id) @ 25°C
    76A
  • Drive Voltage (Max Rds On, Min Rds On)
    20V
  • Rds On (Max) @ Id, Vgs
    45mOhm @ 30A, 20V
  • Vgs(th) (Max) @ Id
    3V @ 15mA
  • Gate Charge (Qg) (Max) @ Vgs
    126 nC @ 20 V
  • Vgs (Max)
    +20V, -5V
  • Input Capacitance (Ciss) (Max) @ Vds
    2204 pF @ 800 V
  • Power Dissipation (Max)
    319W (Tc)
  • FET Feature
    -
  • 2853923259
  • 互联网请联系:
    +86 13510600013
    芯片请联系:
    +86 15521078889
  • 86 13510600013

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