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N3T080MP120D
Part number：
N3T080MP120D
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
NoMIS Power
describe：
1200 V, 80 m SiC MOSFET, TO-247-
sales volume：
0
package：
Tube
ROHS status：
Yes
currency：
USD
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inventory 2882
minimum : 1
quantity
unit price
price
1
8.95
8.95
25
8.45
211.25
100
7.95
795
500
6.95
3475
specifications
  • Part Status
    Active
  • Grade
    -
  • Qualification
    -
  • Mounting Type
    Through Hole
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Package / Case
    TO-247-3
  • Supplier Device Package
    TO-247-3L
  • FET Type
    N-Channel
  • Technology
    SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss)
    1200 V
  • Current - Continuous Drain (Id) @ 25°C
    38A
  • Drive Voltage (Max Rds On, Min Rds On)
    20V
  • Rds On (Max) @ Id, Vgs
    100mOhm @ 15A, 20V
  • Vgs(th) (Max) @ Id
    3V @ 15mA
  • Gate Charge (Qg) (Max) @ Vgs
    53 nC @ 20 V
  • Vgs (Max)
    +20V, -5V
  • Input Capacitance (Ciss) (Max) @ Vds
    896 pF @ 800 V
  • Power Dissipation (Max)
    188W (Tc)
  • FET Feature
    -
  • 2853923259
  • 互联网请联系:
    +86 13510600013
    芯片请联系:
    +86 15521078889
  • 86 13510600013

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