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NC1M120C12WDCU
Part number:
NC1M120C12WDCU
manufacturer:
describe:
SiC MOS Wafer 12mOhm 1200V NiPdA
sales volume:
0
package:
Tray
ROHS status:
Yes
currency:
USD
PDF:
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inventory 4180
minimum : 218
quantity
unit price
price
218
41.22376
8986.77968
specifications
  • Part Status
    Active
  • Mounting Type
    Surface Mount
  • Package / Case
    Die
  • Supplier Device Package
    Wafer
  • Technology
    SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss)
    1200 V
  • Current - Continuous Drain (Id) @ 25°C
    214A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    20V
  • Rds On (Max) @ Id, Vgs
    12mOhm @ 20A, 20V
  • Vgs(th) (Max) @ Id
    3.5V @ 40mA
  • Vgs (Max)
    +22V, -8V
  • Input Capacitance (Ciss) (Max) @ Vds
    8330 pF @ 1000 V