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NC1M120C40GTNG
Part number：
NC1M120C40GTNG
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
NovuSem
describe：
SiC MOSFET N 1200V 40mohm 76A 3
sales volume：
0
package：
Tube
ROHS status：
Yes
currency：
USD
BUY NOW add to cart
inventory 2100
minimum : 50
quantity
unit price
price
50
25.2388
1261.94
specifications
  • Part Status
    Active
  • Mounting Type
    Through Hole
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Package / Case
    TO-247-3
  • Supplier Device Package
    TO-247-3L
  • FET Type
    N-Channel
  • Technology
    SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss)
    1200 V
  • Current - Continuous Drain (Id) @ 25°C
    76A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    20V
  • Rds On (Max) @ Id, Vgs
    40mOhm @ 35A, 20V
  • Vgs(th) (Max) @ Id
    2.8V @ 10mA
  • Vgs (Max)
    +20V, -5V
  • Input Capacitance (Ciss) (Max) @ Vds
    2534 pF @ 1000 V
  • Power Dissipation (Max)
    375W (Ta)
  • 2853923259
  • 互联网请联系:
    +86 13510600013
    芯片请联系:
    +86 15521078889
  • 86 13510600013

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