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NC1M120C75RRNG
Part number:
NC1M120C75RRNG
manufacturer:
describe:
SiC MOSFET N 1200V 75mohm 46A 7
sales volume:
0
package:
Tape & Reel (TR)
ROHS status:
Yes
currency:
USD
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inventory 2100
minimum : 50
quantity
unit price
price
50
15.9878
799.39
specifications
  • Part Status
    Active
  • Mounting Type
    Surface Mount
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Package / Case
    TO-263-8, DPak (7 Leads + Tab)
  • Supplier Device Package
    TO-263-7L
  • FET Type
    N-Channel
  • Technology
    SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss)
    1200 V
  • Current - Continuous Drain (Id) @ 25°C
    46A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    18V
  • Rds On (Max) @ Id, Vgs
    75mOhm @ 20A, 18V
  • Vgs(th) (Max) @ Id
    2.3V @ 5mA
  • Vgs (Max)
    +18V, -5V
  • Input Capacitance (Ciss) (Max) @ Vds
    1402 pF @ 1000 V
  • Power Dissipation (Max)
    240W (Ta)