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NH3T008MP120F2
Part number：
NH3T008MP120F2
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
NoMIS Power
describe：
1200 V, 8 m SiC Half-Bridge Powe
sales volume：
0
package：
Tray
ROHS status：
Yes
currency：
USD
PDF:
BUY NOW add to cart
inventory 2009
minimum : 1
quantity
unit price
price
1
149
149
specifications
  • Part Status
    Active
  • Grade
    -
  • Qualification
    -
  • Mounting Type
    Chassis Mount
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Package / Case
    Module
  • Supplier Device Package
    -
  • Technology
    Silicon Carbide (SiC)
  • Drain to Source Voltage (Vdss)
    1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C
    200A (Tc)
  • Vgs(th) (Max) @ Id
    4V @ 100mA
  • Gate Charge (Qg) (Max) @ Vgs
    530nC @ 20V
  • Configuration
    2 N-Channel (Half Bridge)
  • FET Feature
    -
  • 2853923259
  • 互联网请联系:
    +86 13510600013
    芯片请联系:
    +86 15521078889
  • 86 13510600013

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