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P3M06060G7
Part number：
P3M06060G7
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
PN Junction Semiconductor
describe：
SICFET N-CH 650V 44A TO-263-7
sales volume：
0
package：
Tape & Reel (TR)
ROHS status：
Yes
currency：
USD
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inventory 2000
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specifications
  • Part Status
    Active
  • Grade
    Automotive
  • Qualification
    AEC-Q101
  • Mounting Type
    Surface Mount
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Package / Case
    TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
  • Supplier Device Package
    D2PAK-7
  • FET Type
    N-Channel
  • Technology
    SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss)
    650 V
  • Current - Continuous Drain (Id) @ 25°C
    44A
  • Drive Voltage (Max Rds On, Min Rds On)
    15V
  • Rds On (Max) @ Id, Vgs
    79mOhm @ 20A, 15V
  • Vgs(th) (Max) @ Id
    2.2V @ 20mA (Typ)
  • Vgs (Max)
    +20V, -8V
  • Power Dissipation (Max)
    159W
  • FET Feature
    -
  • 2853923259
  • 互联网请联系:
    +86 13510600013
    芯片请联系:
    +86 15521078889
  • 86 13510600013

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