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P3M12025K4
Part number：
P3M12025K4
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
PN Junction Semiconductor
describe：
SICFET N-CH 1200V 112A TO-247-4
sales volume：
0
package：
Tube
ROHS status：
Yes
currency：
USD
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inventory 2000
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specifications
  • Part Status
    Active
  • Grade
    Automotive
  • Qualification
    AEC-Q101
  • Mounting Type
    Through Hole
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Package / Case
    TO-247-4
  • Supplier Device Package
    TO-247-4L
  • FET Type
    N-Channel
  • Technology
    SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss)
    1200 V
  • Current - Continuous Drain (Id) @ 25°C
    112A
  • Drive Voltage (Max Rds On, Min Rds On)
    15V
  • Rds On (Max) @ Id, Vgs
    35mOhm @ 50A, 15V
  • Vgs(th) (Max) @ Id
    2.2V @ 50mA (Typ)
  • Vgs (Max)
    +19V, -8V
  • Power Dissipation (Max)
    577W
  • FET Feature
    -
  • 2853923259
  • 互联网请联系:
    +86 13510600013
    芯片请联系:
    +86 15521078889
  • 86 13510600013

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