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QS1200SCM36
Part number：
QS1200SCM36
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
Quest Semi
describe：
1200V 36AMP SiC Mosfet
sales volume：
0
package：
Tube
ROHS status：
Yes
currency：
USD
PDF:
BUY NOW add to cart
inventory 2990
minimum : 50
quantity
unit price
price
50
1.25
62.5
100
1.16
116
250
1
250
specifications
  • Part Status
    Active
  • Grade
    Automotive
  • Qualification
    -
  • Mounting Type
    Through Hole
  • Operating Temperature
    -55°C ~ 175°C
  • Package / Case
    TO-247-3
  • Supplier Device Package
    PG-TO247-3
  • FET Type
    N-Channel
  • Technology
    SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss)
    1200 V
  • Current - Continuous Drain (Id) @ 25°C
    36A
  • Drive Voltage (Max Rds On, Min Rds On)
    2.8V
  • Rds On (Max) @ Id, Vgs
    100mOhm @ 20A, 20V
  • Vgs(th) (Max) @ Id
    3.8V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs
    60 nC @ 600 V
  • Vgs (Max)
    +25V, -10V
  • Input Capacitance (Ciss) (Max) @ Vds
    1001 pF @ 800 V
  • Power Dissipation (Max)
    198W
  • 2853923259
  • 互联网请联系:
    +86 13510600013
    芯片请联系:
    +86 15521078889
  • 86 13510600013

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