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QS120SCM80D2P
Part number:
QS120SCM80D2P
manufacturer:
describe:
1200V N-CHANNEL SIC MOSFET 80 M
sales volume:
0
package:
Tube
ROHS status:
Yes
currency:
USD
PDF:
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inventory 3000
minimum : 1
quantity
unit price
price
1
9.25
9.25
10
8.99
89.9
250
8.75
2187.5
500
8.25
4125
specifications
  • Part Status
    Active
  • Grade
    -
  • Qualification
    -
  • Mounting Type
    Surface Mount
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Package / Case
    TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
  • Supplier Device Package
    D2PAK-7L
  • FET Type
    N-Channel
  • Technology
    SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss)
    1200 V
  • Current - Continuous Drain (Id) @ 25°C
    40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    20V
  • Rds On (Max) @ Id, Vgs
    100mOhm @ 20A, 20V
  • Vgs(th) (Max) @ Id
    3.8V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs
    60 nC @ 20 V
  • Vgs (Max)
    +25V, -10V
  • Input Capacitance (Ciss) (Max) @ Vds
    1001 pF @ 800 V
  • Power Dissipation (Max)
    250W (Tc)
  • FET Feature
    -