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QS1700SCM8
Part number:
QS1700SCM8
manufacturer:
describe:
1700v 8AMP SiC Mosfet
sales volume:
0
package:
Tube
ROHS status:
Yes
currency:
USD
PDF:
BUY NOW add to cart
inventory 4190
minimum : 10
quantity
unit price
price
10
3.95
39.5
50
3.5
175
100
3.1
310
1000
2.8
2800
specifications
  • Part Status
    Active
  • Grade
    Automotive
  • Qualification
    -
  • Mounting Type
    Through Hole
  • Operating Temperature
    -55°C ~ 175°C
  • Package / Case
    TO-247-3
  • Supplier Device Package
    PG-TO247-3
  • FET Type
    N-Channel
  • Technology
    SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss)
    1700 V
  • Current - Continuous Drain (Id) @ 25°C
    8A
  • Drive Voltage (Max Rds On, Min Rds On)
    20V
  • Rds On (Max) @ Id, Vgs
    100mOhm @ 2A, 20V
  • Vgs(th) (Max) @ Id
    4V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs
    16 nC @ 1200 V
  • Input Capacitance (Ciss) (Max) @ Vds
    142 pF @ 1000 V
  • Power Dissipation (Max)
    88W