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QS65SCM65D2P
Part number:
QS65SCM65D2P
manufacturer:
describe:
650v 65amp SiC Mosfet D2PAK
sales volume:
0
package:
Tube
ROHS status:
Yes
currency:
USD
BUY NOW add to cart
inventory 2980
minimum : 1
quantity
unit price
price
1
10.22
10.22
10
9.49
94.9
250
9.23
2307.5
500
8.65
4325
specifications
  • Part Status
    Active
  • Grade
    -
  • Qualification
    -
  • Mounting Type
    Surface Mount
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Package / Case
    TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
  • Supplier Device Package
    D2PAK-7L
  • FET Type
    N-Channel
  • Technology
    SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss)
    650 V
  • Current - Continuous Drain (Id) @ 25°C
    65A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    18V, 20V
  • Rds On (Max) @ Id, Vgs
    70mOhm @ 25A, 20V
  • Vgs(th) (Max) @ Id
    5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs
    105 nC @ 18 V
  • Vgs (Max)
    +25V, -10V
  • Input Capacitance (Ciss) (Max) @ Vds
    1946 pF @ 400 V
  • Power Dissipation (Max)
    294W (Tc)
  • FET Feature
    -