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QSD6HCS65U
Part number:
QSD6HCS65U
manufacturer:
describe:
SiC 6AMP 650V Schottky Barrier D
sales volume:
0
package:
Tube
ROHS status:
Yes
currency:
USD
BUY NOW add to cart
inventory 5000
minimum : 100
quantity
unit price
price
100
0.95
95
500
0.85
425
1000
0.75
750
specifications
  • Part Status
    Active
  • Grade
    Automotive
  • Qualification
    AEC-Q101
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-2
  • Supplier Device Package
    TO-247-2
  • Speed
    No Recovery Time > 500mA (Io)
  • Technology
    SiC (Silicon Carbide) Schottky
  • Current - Reverse Leakage @ Vr
    15 µA @ 650 V
  • Voltage - DC Reverse (Vr) (Max)
    650 V
  • Current - Average Rectified (Io)
    21A
  • Voltage - Forward (Vf) (Max) @ If
    1.6 V @ 6 A
  • Capacitance @ Vr, F
    421pF @ 0V, 1MHz
  • Operating Temperature - Junction
    -55°C ~ 175°C
  • Reverse Recovery Time (trr)
    0 ns