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TPD3215M
Part number：
TPD3215M
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
Transphorm
describe：
MOSFET 2N-CH 600V 70A MODULE
sales volume：
0
package：
Bulk
ROHS status：
Yes
currency：
USD
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inventory 2000
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specifications
  • Part Status
    Obsolete
  • Mounting Type
    Through Hole
  • Power - Max
    470W
  • Operating Temperature
    -40°C ~ 150°C (TJ)
  • Package / Case
    Module
  • Supplier Device Package
    Module
  • Technology
    GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss)
    600V
  • Current - Continuous Drain (Id) @ 25°C
    70A (Tc)
  • Rds On (Max) @ Id, Vgs
    34mOhm @ 30A, 8V
  • Vgs(th) (Max) @ Id
    -
  • Gate Charge (Qg) (Max) @ Vgs
    28nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds
    2260pF @ 100V
  • Configuration
    2 N-Channel (Half Bridge)
  • FET Feature
    -
  • 2853923259
  • 互联网请联系:
    +86 13510600013
    芯片请联系:
    +86 15521078889
  • 86 13510600013

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