VisIC was founded in 2010 to serve as a technology licensor and supplier of high-voltage (650V and above), high-volume GaN devices for the rapidly expanding power conversion market. At the time of the company's establishment, the technical team possessed over 20 years of cumulative experience in the design, manufacturing, and application of GaN-based RF devices. Leveraging their deep understanding of the core materials and underlying physics of GaN-based devices, they successfully developed a true GaN Metal-Insulator-Semiconductor High Electron Mobility Transistor (MISHEMT).